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JAN2N7334

Microsemi Corporation
JAN2N7334
MOSFET 4N-CH 100V 1A MO-036AB
14-DIP (0.300", 7.62mm)
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JAN2N7334
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JAN2N7334 Attributes
TYPE DESCRIPTION SELECT
Series -
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A
Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Grade Military
Qualification MIL-PRF-19500/597
Mounting Type Through Hole
Package / Case 14-DIP (0.300", 7.62mm)
Supplier Device Package MO-036AB
8,050 In Stock
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