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APTGT100DH170G
Microsemi Corporation
APTGT100DH170G
IGBT MODULE 1700V 150A 560W SP6
SP6
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APTGT100DH170G Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Configuration | Asymmetrical Bridge | |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | |
| Current - Collector (Ic) (Max) | 150 A | |
| Power - Max | 560 W | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 100A | |
| Current - Collector Cutoff (Max) | 350 µA | |
| Input Capacitance (Cies) @ Vce | 9 nF @ 25 V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP6 | |
| Supplier Device Package | SP6 |
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