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MT8HTF3264HY-40E
Micron Technology Inc
MT8HTF3264HY-40E
DIMM, DIMM200,24
Active
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MT8HTF3264HY-40E Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Memory Density | 2.1475 Gbit | |
Memory Width | 64 | |
Organization | 32MX64 | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Access Time-Max | 600 ps | |
Clock Frequency-Max (fCLK) | 200 MHz | |
Refresh Cycles | 8192 | |
Memory IC Type | DDR DRAM MODULE | |
I/O Type | COMMON | |
Number of Words Code | 32000000 | |
Number of Words | 33.5544 M | |
Output Characteristics | 3-STATE | |
Standby Current-Max | 40 mA | |
Supply Current-Max | 1.84 mA | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
JESD-30 Code | R-PDMA-N200 | |
Qualification Status | Not Qualified | |
JESD-609 Code | ||
Moisture Sensitivity Level | ||
Operating Temperature-Max | 65 °C | |
Operating Temperature-Min | ||
Peak Reflow Temperature (Cel) | 260 | |
Number of Terminals | 200 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | DIMM | |
Package Equivalence Code | DIMM200,24 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Surface Mount | NO | |
Terminal Finish | ||
Terminal Form | NO LEAD | |
Terminal Pitch | 600 µm | |
Terminal Position | DUAL | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Package Description | DIMM, DIMM200,24 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Date Of Intro |
5,155
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