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MT47H128M8HQ-37E:ETR
Micron Technology Inc
MT47H128M8HQ-37E:ETR
TFBGA,
Active
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MT47H128M8HQ-37E:ETR Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Memory Density | 1.0737 Gbit | |
| Memory Width | 8 | |
| Organization | 128MX8 | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Access Time-Max | 500 ps | |
| Clock Frequency-Max (fCLK) | ||
| Refresh Cycles | ||
| Access Mode | MULTI BANK PAGE BURST | |
| Memory IC Type | DDR2 DRAM | |
| Additional Feature | AUTO/SELF REFRESH | |
| I/O Type | ||
| Interleaved Burst Length | ||
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Words Code | 128000000 | |
| Number of Words | 134.2177 M | |
| Operating Mode | SYNCHRONOUS | |
| Output Characteristics | ||
| Self Refresh | YES | |
| Sequential Burst Length | ||
| Standby Current-Max | ||
| Supply Current-Max | ||
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| JESD-30 Code | R-PBGA-B60 | |
| Qualification Status | Not Qualified | |
| JESD-609 Code | e1 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Number of Terminals | 60 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | ||
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 800 µm | |
| Terminal Position | BOTTOM | |
| Seated Height-Max | 1.2 mm | |
| Length | 11.5 mm | |
| Width | 8 mm | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 |
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