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MT47H128M4B6-37ELIT:B
Micron Technology Inc
MT47H128M4B6-37ELIT:B
FBGA, BGA60,9X11,32
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MT47H128M4B6-37ELIT:B Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Memory Density | 536.8709 Mbit | |
| Memory Width | 4 | |
| Organization | 128MX4 | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Power Supplies | ||
| Access Time-Max | 500 ps | |
| Clock Frequency-Max (fCLK) | 266 MHz | |
| Refresh Cycles | 8192 | |
| Memory IC Type | DDR2 DRAM | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| Number of Words Code | 128000000 | |
| Number of Words | 134.2177 M | |
| Output Characteristics | 3-STATE | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 7 mA | |
| Supply Current-Max | 225 µA | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| JESD-30 Code | R-PBGA-B60 | |
| Qualification Status | Not Qualified | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Peak Reflow Temperature (Cel) | ||
| Time@Peak Reflow Temperature-Max (s) | ||
| Number of Terminals | 60 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | BALL | |
| Terminal Pitch | 800 µm | |
| Terminal Position | BOTTOM | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | FBGA, BGA60,9X11,32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 |
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