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MT16HTS51264HY-53EA1
Micron Technology Inc
MT16HTS51264HY-53EA1
DIMM, DIMM200,24
Active
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MT16HTS51264HY-53EA1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Memory Density | 34.3597 Gbit | |
| Memory Width | 64 | |
| Organization | 512MX64 | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Access Time-Max | 500 ps | |
| Clock Frequency-Max (fCLK) | 266 MHz | |
| Refresh Cycles | 8192 | |
| Memory IC Type | DDR DRAM MODULE | |
| I/O Type | COMMON | |
| Number of Words Code | 512000000 | |
| Number of Words | 536.8709 M | |
| Output Characteristics | 3-STATE | |
| Standby Current-Max | 128 mA | |
| Supply Current-Max | 2.464 mA | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| JESD-30 Code | R-PDMA-N200 | |
| Qualification Status | Not Qualified | |
| Operating Temperature-Max | 70 °C | |
| Number of Terminals | 200 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Surface Mount | NO | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 600 µm | |
| Terminal Position | DUAL | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Package Description | DIMM, DIMM200,24 |
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