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MT16HTF25664HY-53EXX
Micron Technology Inc
MT16HTF25664HY-53EXX
DIMM,
Active
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MT16HTF25664HY-53EXX Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Pbfree Code | ||
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Memory Density | 17.1799 Gbit | |
| Memory Width | 64 | |
| Organization | 256MX64 | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Access Time-Max | 500 ps | |
| Clock Frequency-Max (fCLK) | ||
| Refresh Cycles | ||
| Access Mode | DUAL BANK PAGE BURST | |
| Memory IC Type | DDR DRAM MODULE | |
| Additional Feature | AUTO/SELF REFRESH | |
| I/O Type | ||
| Interleaved Burst Length | ||
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Words Code | 256000000 | |
| Number of Words | 268.4355 M | |
| Operating Mode | SYNCHRONOUS | |
| Output Characteristics | ||
| Self Refresh | YES | |
| Sequential Burst Length | ||
| Standby Current-Max | ||
| Supply Current-Max | ||
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| JESD-30 Code | R-XZMA-N200 | |
| Qualification Status | Not Qualified | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | ||
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Peak Reflow Temperature (Cel) | ||
| Time@Peak Reflow Temperature-Max (s) | ||
| Number of Terminals | 200 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | ||
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Surface Mount | NO | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | ||
| Terminal Position | ZIG-ZAG | |
| Seated Height-Max | 30.15 mm | |
| Length | 67.6 mm | |
| Width | ||
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, | |
| Pin Count | 200 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 |
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