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EDS1232CABB-10L

Micron Technology Inc
EDS1232CABB-10L
Active
EDS1232CABB-10L
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EDS1232CABB-10L Attributes
TYPE DESCRIPTION SELECT
Pbfree Code
Rohs Code No
Part Life Cycle Code Obsolete
Memory Density 134.2177 Mbit
Memory Width 32
Organization 4MX32
Supply Voltage-Nom (Vsup) 2.5 V
Power Supplies
Access Time-Max 6 ns
Clock Frequency-Max (fCLK) 100 MHz
Refresh Cycles 4096
Memory IC Type SYNCHRONOUS DRAM
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
Number of Words Code 4000000
Number of Words 4.1943 M
Output Characteristics 3-STATE
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 1 mA
Supply Current-Max 250 µA
Technology CMOS
Temperature Grade COMMERCIAL
JESD-30 Code R-PBGA-B90
Qualification Status Not Qualified
JESD-609 Code e0
Moisture Sensitivity Level
Operating Temperature-Max 70 °C
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Number of Terminals 90
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 800 µm
Terminal Position BOTTOM
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
15,736 In Stock
rhos iso9001 iso13485 iso14001 iso45001
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Unit Price: N/A
Total Price: N/A
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