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JANTXV1N649-1
Microchip Technology
JANTXV1N649-1
DIODE GEN PURP 600V 400MA DO35
DO-204AH, DO-35, Axial
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JANTXV1N649-1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Current - Average Rectified (Io) | 400mA | |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 400 mA | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 50 nA @ 600 V | |
| Capacitance @ Vr, F | - | |
| Grade | Military | |
| Qualification | MIL-PRF-19500/240 | |
| Mounting Type | Through Hole | |
| Package / Case | DO-204AH, DO-35, Axial | |
| Supplier Device Package | DO-35 | |
| Operating Temperature - Junction | -65°C ~ 175°C |
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