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JANTXV1N5416
Microchip Technology
JANTXV1N5416
DIODE GEN PURP 100V 3A AXIAL
B, Axial
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JANTXV1N5416 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Current - Average Rectified (Io) | 3A | |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 150 ns | |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V | |
| Capacitance @ Vr, F | - | |
| Grade | Military | |
| Qualification | MIL-PRF-19500/411 | |
| Mounting Type | Through Hole | |
| Package / Case | B, Axial | |
| Supplier Device Package | B, Axial | |
| Operating Temperature - Junction | -65°C ~ 175°C |
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