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JANTX1N6630US
Microchip Technology
JANTX1N6630US
DIODE GEN PURP 900V 1.4A D-5B
SQ-MELF, E
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JANTX1N6630US Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 900 V | |
| Current - Average Rectified (Io) | 1.4A | |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1.4 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 50 ns | |
| Current - Reverse Leakage @ Vr | 2 µA @ 900 V | |
| Capacitance @ Vr, F | - | |
| Grade | Military | |
| Qualification | MIL-PRF-19500/590 | |
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, E | |
| Supplier Device Package | D-5B | |
| Operating Temperature - Junction | -65°C ~ 150°C |
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