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LSIC1MO170E1000

Littelfuse Inc.
LSIC1MO170E1000
SICFET N-CH 1700V 5A TO247-3L
TO-247-3
Active
LSIC1MO170E1000
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LSIC1MO170E1000 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
Rds On (Max) @ Id, Vgs 1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 20 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
3,062 In Stock
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