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LSIC1MO170E1000
Littelfuse Inc.
LSIC1MO170E1000
SICFET N-CH 1700V 5A TO247-3L
TO-247-3
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LSIC1MO170E1000 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 1700 V | |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V | |
Rds On (Max) @ Id, Vgs | 1Ohm @ 2A, 20V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 20 V | |
Vgs (Max) | +22V, -6V | |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 1000 V | |
FET Feature | - | |
Power Dissipation (Max) | 54W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247AD | |
Package / Case | TO-247-3 |
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