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LSIC1MO120G0160

Littelfuse Inc.
LSIC1MO120G0160
MOSFET SIC 1200V 14A TO247-4L
TO-247-4
Active
LSIC1MO120G0160
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LSIC1MO120G0160 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 20 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 800 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
138 In Stock
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