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IXFX20N80Q
IXYS
IXFX20N80Q
MOSFET N-CH 800V 20A PLUS247-3
TO-247-3 Variant
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IXFX20N80Q Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | HiPerFET™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 800 V | |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 420mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 4mA | |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 360W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | PLUS247™-3 | |
Package / Case | TO-247-3 Variant |
7,800
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