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IXFH80N20Q

IXYS
IXFH80N20Q
MOSFET N-CH 200V 80A TO247AD
TO-247-3
Active
IXFH80N20Q
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IXFH80N20Q Attributes
TYPE DESCRIPTION SELECT
Series HiPerFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
4,966 In Stock
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