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DCG35C1200HR
IXYS
DCG35C1200HR
DIODE SCHOTTKY 1.2KV 18A ISO247
TO-247-3
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DCG35C1200HR Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 18A | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V | |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | ISO247 | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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