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IXRFSM18N50

IXYS-RF
IXRFSM18N50
MOSFET N-CH 500V 19A 16SMPD
16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
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IXRFSM18N50
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IXRFSM18N50 Attributes
TYPE DESCRIPTION SELECT
Series SMPD
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 340mOhm @ 9.5A, 20V
Vgs(th) (Max) @ Id 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 400 V
FET Feature -
Power Dissipation (Max) 835W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 16-SMPD
Package / Case 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
2,729 In Stock
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