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IXFK44N50F

IXYS-RF
IXFK44N50F
MOSFET N-CH 500V 44A TO264
TO-264-3, TO-264AA
Active
IXFK44N50F
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IXFK44N50F Attributes
TYPE DESCRIPTION SELECT
Series HiPerRF™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-264AA
Package / Case TO-264-3, TO-264AA
5,552 In Stock
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