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IV1Q12050T3

Inventchip
IV1Q12050T3
SIC MOSFET, 1200V 50MOHM, TO-247
TO-247-3
Active
IV1Q12050T3
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IV1Q12050T3 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 6mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 800 V
FET Feature -
Power Dissipation (Max) 327W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
5,422 In Stock
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Minimum: 1
Unit Price: $36.06
Total Price: $36.06
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