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IV1Q12050T3
Inventchip
IV1Q12050T3
SIC MOSFET, 1200V 50MOHM, TO-247
TO-247-3
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IV1Q12050T3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 20V | |
Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 20V | |
Vgs(th) (Max) @ Id | 3.2V @ 6mA | |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V | |
Vgs (Max) | +20V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 2770 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 327W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Package / Case | TO-247-3 |
5,422
In Stock
Minimum: 1
Unit Price:
$36.06
Total Price:
$36.06
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