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IV1D12005O2
Inventchip
IV1D12005O2
DIODE SIL CARB 1.2KV 17A TO220-2
TO-220-2
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IV1D12005O2 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Current - Average Rectified (Io) | 17A | |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 30 µA @ 1200 V | |
Capacitance @ Vr, F | 320pF @ 1V, 1MHz | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 | |
Supplier Device Package | TO-220-2 | |
Operating Temperature - Junction | -55°C ~ 175°C |
6,429
In Stock
Minimum: 1
Unit Price:
$6.01
Total Price:
$6.01
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