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SIGC100T60R3EX1SA1

Infineon Technologies
SIGC100T60R3EX1SA1
IGBT 3 CHIP 600V 200A WAFER
Die
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SIGC100T60R3EX1SA1 Attributes
TYPE DESCRIPTION SELECT
Series TrenchStop™
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 200 A
Current - Collector Pulsed (Icm) 600 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
1,232 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $13.45
Total Price: $13.45
This price is for reference only, please contact us for now price support@easev.net.

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