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IRLMS2002TR

Infineon Technologies
IRLMS2002TR
MOSFET N-CH 20V 6.5A 6-TSOP
SOT-23-6
Active
IRLMS2002TR
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IRLMS2002TR Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 1310 pF @ 15 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Micro6™(SOT23-6)
Package / Case SOT-23-6
5,178 In Stock
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