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IRLH5036TRPBF

Infineon Technologies
IRLH5036TRPBF
MOSFET N-CH 60V 20A/100A 8PQFN
8-PowerVDFN
Active
IRLH5036TRPBF
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IRLH5036TRPBF Attributes
TYPE DESCRIPTION SELECT
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5360 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
2,172 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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