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IRLH5030TR2PBF

Infineon Technologies
IRLH5030TR2PBF
MOSFET N-CH 100V 13A 8PQFN
8-PowerVDFN
Active
IRLH5030TR2PBF
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IRLH5030TR2PBF Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 5185 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6) Single Die
Package / Case 8-PowerVDFN
792 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: N/A
Total Price: N/A
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