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IRL1004STRRPBF

Infineon Technologies
IRL1004STRRPBF
MOSFET N-CH 40V 130A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRL1004STRRPBF
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IRL1004STRRPBF Attributes
TYPE DESCRIPTION SELECT
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 78A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5330 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
8,768 In Stock
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