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IRFS52N15DPBF

Infineon Technologies
IRFS52N15DPBF
MOSFET N-CH 150V 51A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRFS52N15DPBF
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IRFS52N15DPBF Attributes
TYPE DESCRIPTION SELECT
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
1,248 In Stock
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Unit Price: N/A
Total Price: N/A
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