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IRFS23N20D
Infineon Technologies
IRFS23N20D
MOSFET N-CH 200V 24A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRFS23N20D Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 200 V | |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | D2PAK | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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