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IRFHM792TRPBF
Infineon Technologies
IRFHM792TRPBF
MOSFET 2N-CH 100V 2.3A 8PQFN
8-PowerVDFN
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IRFHM792TRPBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 2.3A | |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 10µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V | |
| Power - Max | 2.3W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
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