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IRFH7004TR2PBF

Infineon Technologies
IRFH7004TR2PBF
MOSFET N CH 40V 100A PQFN5X6
8-VQFN Exposed Pad
Active
IRFH7004TR2PBF
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IRFH7004TR2PBF Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 194 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 6419 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-VQFN Exposed Pad
8,819 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: N/A
Total Price: N/A
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