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IRFH5302TR2PBF

Infineon Technologies
IRFH5302TR2PBF
MOSFET N-CH 30V 32A 5X6 PQFN
8-PowerVDFN
Active
IRFH5302TR2PBF
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IRFH5302TR2PBF Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 15 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6) Single Die
Package / Case 8-PowerVDFN
7,021 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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