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IRFH5110TR2PBF
Infineon Technologies
IRFH5110TR2PBF
MOSFET N-CH 100V 5X6 PQFN
8-PowerVDFN
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IRFH5110TR2PBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 37A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 3152 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Package / Case | 8-PowerVDFN |
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