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IRFB59N10DPBF
Infineon Technologies
IRFB59N10DPBF
MOSFET N-CH 100V 59A TO220AB
TO-220-3
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IRFB59N10DPBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
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