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IRFB4233PBF
Infineon Technologies
IRFB4233PBF
MOSFET N-CH 230V 56A TO220AB
TO-220-3
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IRFB4233PBF Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 230 V | |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 37mOhm @ 28A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 5510 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 370W (Tc) | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220AB | |
Package / Case | TO-220-3 |
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