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IRF7910TRPBF
Infineon Technologies
IRF7910TRPBF
MOSFET 2N-CH 12V 10A 8SO
8-SOIC (0.154", 3.90mm Width)
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IRF7910TRPBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 12V | |
| Current - Continuous Drain (Id) @ 25°C | 10A | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 4.5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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