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IRF7832PBF
Infineon Technologies
IRF7832PBF
MOSFET N-CH 30V 20A 8SO
8-SOIC (0.154", 3.90mm Width)
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IRF7832PBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.32V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 4.5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Operating Temperature | -55°C ~ 155°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SO | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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