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IRF7601PBF
Infineon Technologies
IRF7601PBF
MOSFET N-CH 20V 5.7A MICRO8
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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IRF7601PBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Micro8™ | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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