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IRF7509TR

Infineon Technologies
IRF7509TR
MOSFET N/P-CH 30V 2.7A/2A MICRO8
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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IRF7509TR
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IRF7509TR Attributes
TYPE DESCRIPTION SELECT
Series HEXFET®
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.7A, 2A
Rds On (Max) @ Id, Vgs 110mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 25V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package Micro8™
3,454 In Stock
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