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IRF7343PBF
Infineon Technologies
IRF7343PBF
MOSFET N/P-CH 55V 4.7A/3.4A 8SO
8-SOIC (0.154", 3.90mm Width)
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IRF7343PBF Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | HEXFET® | |
Technology | MOSFET (Metal Oxide) | |
Configuration | N and P-Channel | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 55V | |
Current - Continuous Drain (Id) @ 25°C | 4.7A, 3.4A | |
Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V | |
Power - Max | 2W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Supplier Device Package | 8-SO |
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