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IRF7341PBF
Infineon Technologies
IRF7341PBF
MOSFET 2N-CH 55V 4.7A 8SO
8-SOIC (0.154", 3.90mm Width)
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IRF7341PBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 4.7A | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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