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IRF6710S2TRPBF
Infineon Technologies
IRF6710S2TRPBF
MOSFET N-CH 25V 12A DIRECTFET
DirectFET™ Isometric S1
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IRF6710S2TRPBF Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25 V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 37A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5.9mOhm @ 12A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 25µA | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 13 V | |
FET Feature | - | |
Power Dissipation (Max) | 1.8W (Ta), 15W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | DirectFET™ Isometric S1 | |
Package / Case | DirectFET™ Isometric S1 |
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