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IRF6678TR1PBF
Infineon Technologies
IRF6678TR1PBF
MOSFET N-CH 30V 30A DIRECTFET
DirectFET™ Isometric MX
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IRF6678TR1PBF Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.25V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET™ MX | |
Package / Case | DirectFET™ Isometric MX |
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