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IRF6609TRPBF
Infineon Technologies
IRF6609TRPBF
MOSFET N-CH 20V 31A DIRECTFET
DirectFET™ Isometric MT
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IRF6609TRPBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 31A, 10V | |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6290 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta), 89W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET™ MT | |
| Package / Case | DirectFET™ Isometric MT |
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