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IRF6608TR1
Infineon Technologies
IRF6608TR1
MOSFET N-CH 30V 13A DIRECTFET
DirectFET™ Isometric ST
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IRF6608TR1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 55A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DIRECTFET™ ST | |
| Package / Case | DirectFET™ Isometric ST |
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