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IRF6217TRPBF

Infineon Technologies
IRF6217TRPBF
MOSFET P-CH 150V 700MA 8SO
8-SOIC (0.154", 3.90mm Width)
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IRF6217TRPBF
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IRF6217TRPBF Attributes
TYPE DESCRIPTION SELECT
Series HEXFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
3,393 In Stock
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Unit Price: N/A
Total Price: N/A
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