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IRF520NSPBF
Infineon Technologies
IRF520NSPBF
MOSFET N-CH 100V 9.7A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRF520NSPBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) | |
| Operating Temperature | - | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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