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IRF3708PBF

Infineon Technologies
IRF3708PBF
MOSFET N-CH 30V 62A TO220AB
TO-220-3
Active
IRF3708PBF
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IRF3708PBF Attributes
TYPE DESCRIPTION SELECT
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2417 pF @ 15 V
FET Feature -
Power Dissipation (Max) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
4,571 In Stock
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