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IPW65R190CFDAFKSA1
Infineon Technologies
IPW65R190CFDAFKSA1
MOSFET N-CH 650V 17.5A TO247-3
TO-247-3
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IPW65R190CFDAFKSA1 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | CoolMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 700µA | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 151W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3 | |
Package / Case | TO-247-3 |
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