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IPS70R950CEAKMA1

Infineon Technologies
IPS70R950CEAKMA1
MOSFET N-CH 700V 7.4A TO251
TO-251-3 Stub Leads, IPak
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IPS70R950CEAKMA1
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IPS70R950CEAKMA1 Attributes
TYPE DESCRIPTION SELECT
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
99 In Stock
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