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IPP60R099CPAAKSA1

Infineon Technologies
IPP60R099CPAAKSA1
MOSFET N-CH 600V 31A TO220-3
TO-220-3
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IPP60R099CPAAKSA1
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IPP60R099CPAAKSA1 Attributes
TYPE DESCRIPTION SELECT
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V
FET Feature -
Power Dissipation (Max) 255W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
710 In Stock
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Minimum: 1
Unit Price: $5.34
Total Price: $5.34
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