Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPP50R399CPHKSA1
Infineon Technologies
IPP50R399CPHKSA1
MOSFET N-CH 560V 9A TO220-3
TO-220-3
Active
Payment Methods:
Shipping Methods:
IPP50R399CPHKSA1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 560 V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 4.9A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 330µA | |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 83W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3-1 | |
| Package / Case | TO-220-3 |
3,815
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.
